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HIGH RATE ALUMINIUM ETCHING IN A BATCH LOADED REACTIVE ION ETCHERSAIA RJ; GOROWITZ B.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 247-251Article

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RIE OF SIO₂ IN DOPED AND UNDOPED FLUOROCARBON PLASMASNORSTROEM H; BUCHTA R; RUNOVC F et al.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 12; PP. 737-745; BIBL. 29 REF.Article

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REACTIVE ION ETCHING FOR VLSIEPHRATH LM.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1315-1319; BIBL. 15 REF.Article

REACTIVE ION ETCHING OF TA-SILICIDE/POLYSILICON DOUBLE LAYERS FOR THE FABRICATION OF INTEGRATED CIRCUITSMATTAUSCH HJ; HASLER B; BEINVOGL W et al.1983; JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B: MICROELECTRONICS PROCESSING AND PHENOMENA; ISSN 512982; USA; DA. 1983; VOL. 1; NO 1; PP. 15-22; BIBL. 17 REF.Article

REACTIVE ION BEAM ETCHING OF GAAS IN CCL₄POWELL RA.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 3; PART. 2; PP. L170-L172; BIBL. 18 REF.Article

PROFILE CONTROL BY CHEMICALLY ASSISTED ION-BEAM AND REACTIVE ION BEAM ETCHINGCHINN JD; ADESIDA I; WOLF ED et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 2; PP. 185-187; BIBL. 13 REF.Article

OBSERVATIONS OF CMFN RADICALS IN REACTIVE ION BEAMETCHINGHAYASHI T; MIYAMURA M; KOMIYA S et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 12; PART. 2; PP. L755-L757; BIBL. 19 REF.Article

MECHANICAL STABILITY OF REACTIVE ION-ETCHED POLY(METHYL METHACRYLATE) AND POLYIMIDE MICROSTRUCTURES IN TRILEVEL ELECTRON BEAM LITHOGRAPHYORO JA; WOLFE JC.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7379-7384; BIBL. 20 REF.Article

SELECTIVE REACTIVE ION BEAM ETCHING OF SIO₂ OVER POLYCRYSTALLINE SIHEATH BA.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 2; PP. 396-402; BIBL. 16 REF.Article

HIGH RESOLUTION TRILEVEL RESISTNAMATSU H; OZAKI Y; HIRATA K et al.1982; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1982; VOL. 21; NO 2; PP. 672-676; BIBL. 9 REF.Article

RIE CONTAMINATION OF ETCHED SILICON SURFACESEPHRATH LM; BENNETT RS.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 8; PP. 1822-1826; BIBL. 8 REF.Article

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REACTIVE ION ETCHING RESISTANT NEGATIVE RESISTS FOR ION BEAM LITHOGRAPHYWADA Y; MOCHIJI K; OBAYASHI H et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 187-190; BIBL. 11 REF.Article

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Magneton etching of InP using mixture of methane and hydrogen and its comparison with reactive ion etchingSINGH, J.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 4, pp 1911-1919, issn 0734-211XConference Paper